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Kingston 9905471-071.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
比较
Kingston 9905471-071.A00LF 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
总分
Kingston 9905471-071.A00LF 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905471-071.A00LF 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
28
左右 11% 更低的延时
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
报告一个错误
更快的读取速度,GB/s
16.2
15.5
测试中的平均数值
更快的写入速度,GB/s
12.7
9.7
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston 9905471-071.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
28
读取速度,GB/s
15.5
16.2
写入速度,GB/s
9.7
12.7
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2650
2417
Kingston 9905471-071.A00LF 8GB RAM的比较
Kingston 9905471-079.A00LF 8GB
Corsair CMW16GX4M2C3000C15 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB RAM的比较
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT51264BF160BJ.M8F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT102464BF160B-16F 8GB
SK Hynix HMA81GU6JJR8N-VK 8GB
Samsung M3 93T5750CZA-CE6 2GB
Wilk Elektronik S.A. IRH3200D464L16/16G 16GB
Kingston 9965525-155.A00LF 8GB
Team Group Inc. TEAMGROUP-UD4-4500 8GB
Crucial Technology BL16G32C16U4B.16FE 16GB
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMT32GX4M4K4000C19 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
G Skill Intl F4-2666C15-8GRR 8GB
A-DATA Technology DDR3 1600 4GB
Kingston KHX21334D4/8G 8GB
报告一个错误
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Bug description
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