Kingston 9905471-071.A00LF 8GB vs Samsung M474A1G43EB1-CRC 8GB

总分

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

总分

Samsung M474A1G43EB1-CRC 8GB

Samsung M474A1G43EB1-CRC 8GB

差异规格评论

差异

Kingston 9905471-071.A00LF 8GB

需要考虑的原因
Kingston 9905471-071.A00LF 8GB

报告一个错误

Samsung M474A1G43EB1-CRC 8GB

需要考虑的原因
Samsung M474A1G43EB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 25

左右 -14% 更低的延时
更快的读取速度，GB/s

17.2 15.5

测试中的平均数值
更快的写入速度，GB/s

13.8 9.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-071.A00LF 8GB

Samsung M474A1G43EB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 22
读取速度，GB/s

15.5 17.2
写入速度，GB/s

9.7 13.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2650 2989

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3466C16-4GVK 4GB

G Skill Intl F4-3466C16-4GVK 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT16G4DFD824A.M16FJ 16GB

Crucial Technology CT16G4DFD824A.M16FJ 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMK16GX4M2A2666C16 8GB

Corsair CMK16GX4M2A2666C16 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

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SpecTek Incorporated ?????????????????? 2GB

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Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

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G Skill Intl F4-4000C14-16GTZR 16GB

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Apacer Technology 78.CAGNT.AR40B 8GB

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