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Kingston 9905471-076.A00LF 8GB
Corsair CMD32GX4M4B2800C14 8GB

Kingston 9905471-076.A00LF 8GB vs Corsair CMD32GX4M4B2800C14 8GB

总分
star star star star star
Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

总分
star star star star star
Corsair CMD32GX4M4B2800C14 8GB

Corsair CMD32GX4M4B2800C14 8GB

差异 规格 评论

差异

Kingston 9905471-076.A00LF 8GB 需要考虑的原因
Kingston 9905471-076.A00LF 8GB
报告一个错误
Corsair CMD32GX4M4B2800C14 8GB 需要考虑的原因
Corsair CMD32GX4M4B2800C14 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 43
    左右 -126% 更低的延时
  • 更快的读取速度，GB/s
    20.5 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.5 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9905471-076.A00LF 8GB
Corsair CMD32GX4M4B2800C14 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    43 left arrow 19
  • 读取速度，GB/s
    13.9 left arrow 20.5
  • 写入速度，GB/s
    8.4 left arrow 15.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2322 left arrow 3665

Kingston 9905471-076.A00LF 8GB RAM的比较

Wilk Elektronik S.A. GL1600D364L10/8G 8GB
Kingston 9965600-005.A00G 16GB

Corsair CMD32GX4M4B2800C14 8GB RAM的比较

Crucial Technology CT16G4DFD8266.M16FJ 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-2800C15-8GVRB 8GB
G Skill Intl F4-2800C15-8GVRB 8GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Corsair CMD32GX4M4B2800C14 8GB
Corsair CMD32GX4M4B2800C14 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Apacer Technology 78.B1GM3.AF00B 4GB
Apacer Technology 78.B1GM3.AF00B 4GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3200C16-16GVKA 16GB
G Skill Intl F4-3200C16-16GVKA 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFD824A.M16FE 8GB
Crucial Technology CT8G4DFD824A.M16FE 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT16G4DFD824A.M16FJ 16GB
Crucial Technology CT16G4DFD824A.M16FJ 16GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology CT16G4SFRA266.M16FR 16GB
Crucial Technology CT16G4SFRA266.M16FR 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Cortus SAS 8ATF1G64AZ-2G6E1 8GB
Cortus SAS 8ATF1G64AZ-2G6E1 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Avant Technology W641GU42J5213N3 8GB
Avant Technology W641GU42J5213N3 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Apacer Technology 78.BAGP4.AR50C 4GB
Apacer Technology 78.BAGP4.AR50C 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston MSI32D4S2S1ME-8 8GB
Kingston MSI32D4S2S1ME-8 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
G Skill Intl F4-4266C17-8GTZRB 8GB
G Skill Intl F4-4266C17-8GTZRB 8GB
内存RAM