Kingston 9905471-076.A00LF 8GB vs Samsung M471A2K43EB1-CWE 16GB

总分

Kingston 9905471-076.A00LF 8GB

Kingston 9905471-076.A00LF 8GB

总分

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

差异规格评论

差异

Kingston 9905471-076.A00LF 8GB

需要考虑的原因
Kingston 9905471-076.A00LF 8GB

报告一个错误

低于PassMark测试中的延时，ns

43 55

左右 22% 更低的延时

Samsung M471A2K43EB1-CWE 16GB

需要考虑的原因
Samsung M471A2K43EB1-CWE 16GB

报告一个错误

更快的读取速度，GB/s

15.8 13.9

测试中的平均数值
更快的写入速度，GB/s

13.8 8.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-076.A00LF 8GB

Samsung M471A2K43EB1-CWE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 55
读取速度，GB/s

13.9 15.8
写入速度，GB/s

8.4 13.8
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2322 2701

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905471-076.A00LF 8GB

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Kingston KM0VW4-MID 8GB

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Kingston 9965525-155.A00LF 8GB

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-2133C15-8GFX 8GB

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Kingston HP698651-154-MCN 8GB

Crucial Technology CT8G4SFRA32A.C4FE 8GB

Crucial Technology CT8G4SFRA32A.C4FE 8GB