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Kingston 9905474-019.A00LF 2GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
比较
Kingston 9905474-019.A00LF 2GB vs Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
总分
Kingston 9905474-019.A00LF 2GB
总分
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905474-019.A00LF 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
35
左右 26% 更低的延时
需要考虑的原因
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
报告一个错误
更快的读取速度,GB/s
16.8
14.6
测试中的平均数值
更快的写入速度,GB/s
13.7
7.8
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston 9905474-019.A00LF 2GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
35
读取速度,GB/s
14.6
16.8
写入速度,GB/s
7.8
13.7
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2207
3306
Kingston 9905474-019.A00LF 2GB RAM的比较
Kingston 99U5471-012.A00LF 4GB
Crucial Technology CT8G4DFD8213.C16FA11 8GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMK64GX4M8B3200C16 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G
Kingston 9905474-019.A00LF 2GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
G Skill Intl F4-4000C19-8GTZSW 8GB
Samsung M393B1K70CH0-CH9 8GB
Team Group Inc. TEAMGROUP-UD4-4000 4GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT8G4DFS8213.M8FH 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
AMD R5316G1609U2K 8GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMD16GX4M2K4133C19 8GB
Peak Electronics 256X64M-67E 2GB
Kingston RB26D4U9D8MEH-16 16GB
Samsung M3 78T5663RZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
报告一个错误
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Bug description
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