Kingston 9905584-016.A00LF 4GB vs Corsair CMR16GX4M2Z3200C16 8GB

总分

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

总分

Corsair CMR16GX4M2Z3200C16 8GB

Corsair CMR16GX4M2Z3200C16 8GB

差异规格评论

差异

Kingston 9905584-016.A00LF 4GB

需要考虑的原因
Kingston 9905584-016.A00LF 4GB

报告一个错误

Corsair CMR16GX4M2Z3200C16 8GB

需要考虑的原因
Corsair CMR16GX4M2Z3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 26

左右 -18% 更低的延时
更快的读取速度，GB/s

18.7 14.2

测试中的平均数值
更快的写入速度，GB/s

14.7 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston 9905584-016.A00LF 4GB

Corsair CMR16GX4M2Z3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 22
读取速度，GB/s

14.2 18.7
写入速度，GB/s

8.5 14.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2277 3291

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Mushkin 99[2/7/4]183 8GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Samsung M471A2K43CB1-CTCT 16GB

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Kingston 9905584-016.A00LF 4GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Micron Technology 4ATF51264HZ-2G3E1 4GB

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Kingston KHX318C10FR/8G 8GB

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SK Hynix HMA82GS6DJR8N-WM 16GB

SK Hynix HMA82GS6DJR8N-WM 16GB

Kingston 9905469-153.A00LF 4GB

Kingston 9905469-153.A00LF 4GB

Kingston RB26D4U9D8MEH-16 16GB

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Kingston 99U5584-010.A00LF 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Crucial Technology CT8G4DFD824A.C16FBD1 8GB

Crucial Technology CT8G4DFD824A.C16FBD1 8GB