Kingston 9905584-016.A00LF 4GB vs Crucial Technology CB8GS2400.C8ET 8GB

总分

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

总分

Crucial Technology CB8GS2400.C8ET 8GB

Crucial Technology CB8GS2400.C8ET 8GB

差异规格评论

差异

Kingston 9905584-016.A00LF 4GB

需要考虑的原因
Kingston 9905584-016.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 33

左右 21% 更低的延时

Crucial Technology CB8GS2400.C8ET 8GB

需要考虑的原因
Crucial Technology CB8GS2400.C8ET 8GB

报告一个错误

更快的读取速度，GB/s

16.2 14.2

测试中的平均数值
更快的写入速度，GB/s

12.6 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston 9905584-016.A00LF 4GB

Crucial Technology CB8GS2400.C8ET 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 33
读取速度，GB/s

14.2 16.2
写入速度，GB/s

8.5 12.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2277 2941

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Micron Technology 16ATF4G64AZ-2G6B1 32GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

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G Skill Intl F4-3466C16-8GTZSK 8GB

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AMD R538G1601U2S-UO 8GB

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Samsung M378A1K43BB2-CTD 8GB

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Samsung M471A2K43DB1-CWE 16GB

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Corsair CMD128GX4M8B3200C16 16GB

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Samsung M393B1G70BH0-CK0 8GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Crucial Technology CT16G4SFRA32A.C16FJ 16GB

Kingston ACR16D3LS1KBG/8G 8GB

Kingston ACR16D3LS1KBG/8G 8GB

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Patriot Memory (PDP Systems) 3000 C15 Series 8GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB

Micron Technology 9ASF51272PZ-2G1A2 4GB