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Kingston 9905584-016.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
比较
Kingston 9905584-016.A00LF 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
总分
Kingston 9905584-016.A00LF 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905584-016.A00LF 4GB
报告一个错误
更快的写入速度,GB/s
8.5
7.4
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
26
左右 -4% 更低的延时
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Kingston 9905584-016.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
25
读取速度,GB/s
14.2
14.2
写入速度,GB/s
8.5
7.4
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2277
2104
Kingston 9905584-016.A00LF 4GB RAM的比较
Kingston 99U5584-005.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB RAM的比较
Samsung M393B1K70QB0-CK0 8GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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报告一个错误
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Bug description
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