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Kingston 9905584-016.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
比较
Kingston 9905584-016.A00LF 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
总分
Kingston 9905584-016.A00LF 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905584-016.A00LF 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
60
左右 57% 更低的延时
更快的读取速度,GB/s
14.2
7.8
测试中的平均数值
更快的写入速度,GB/s
8.5
2.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
报告一个错误
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Kingston 9905584-016.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
60
读取速度,GB/s
14.2
7.8
写入速度,GB/s
8.5
2.8
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2277
1505
Kingston 9905584-016.A00LF 4GB RAM的比较
Kingston 99U5584-005.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB RAM的比较
Samsung M393B1K70QB0-CK0 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMZ16GX3M2A2400C10 8GB
UMAX Technology D4-2133-4GB-512X8-L 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston KHX3200C18D4/8G 8GB
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Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology BL16G32C16U4RL.M8FB1 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
SanMax Technologies Inc. SMD4-U8G48HA-24RF 8GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3200C16-32GTZN 32GB
报告一个错误
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Bug description
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