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Kingston 9905584-016.A00LF 4GB
Kingston RB24D4U7S8MB-8 8GB

Kingston 9905584-016.A00LF 4GB vs Kingston RB24D4U7S8MB-8 8GB

总分
star star star star star
Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

总分
star star star star star
Kingston RB24D4U7S8MB-8 8GB

Kingston RB24D4U7S8MB-8 8GB

差异 规格 评论

差异

Kingston 9905584-016.A00LF 4GB 需要考虑的原因
Kingston 9905584-016.A00LF 4GB
报告一个错误
Kingston RB24D4U7S8MB-8 8GB 需要考虑的原因
Kingston RB24D4U7S8MB-8 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 26
    左右 -13% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston 9905584-016.A00LF 4GB
Kingston RB24D4U7S8MB-8 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 23
  • 读取速度，GB/s
    14.2 left arrow 17.3
  • 写入速度，GB/s
    8.5 left arrow 12.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2277 left arrow 2979

Kingston 9905584-016.A00LF 4GB RAM的比较

Kingston 99U5584-005.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB

Kingston RB24D4U7S8MB-8 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4000C18-8GTRG 8GB
G Skill Intl F4-4000C18-8GTRG 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMH32GX4M2D3600C18 16GB
Corsair CMH32GX4M2D3600C18 16GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Golden Empire CL19-19-19 D4-2666 4GB
Golden Empire CL19-19-19 D4-2666 4GB
内存RAM
Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Apacer Technology GD2.1527WH.002 8GB
Apacer Technology GD2.1527WH.002 8GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Wilk Elektronik S.A. GR3200D464L22S/16G 16GB
Wilk Elektronik S.A. GR3200D464L22S/16G 16GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung M393A2K43CB1-CRC 16GB
Samsung M393A2K43CB1-CRC 16GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Asgard VMA41UH-MEC1U2AW1 16GB
Asgard VMA41UH-MEC1U2AW1 16GB
内存RAM
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
G Skill Intl F4-2400C17-4GFX 4GB
G Skill Intl F4-2400C17-4GFX 4GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Apacer Technology 78.CAGP7.AZC0B 8GB
Apacer Technology 78.CAGP7.AZC0B 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology 8ATF2G64HZ-3G2E1 16GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M392A4K40BM0-CRC 32GB
Samsung M392A4K40BM0-CRC 32GB
内存RAM