Kingston 9905584-016.A00LF 4GB vs Samsung M471A1A43DB0-CPB 8GB

总分

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

总分

Samsung M471A1A43DB0-CPB 8GB

Samsung M471A1A43DB0-CPB 8GB

差异规格评论

差异

Kingston 9905584-016.A00LF 4GB

需要考虑的原因
Kingston 9905584-016.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 4% 更低的延时
更快的读取速度，GB/s

14.2 12.3

测试中的平均数值
更快的写入速度，GB/s

8.5 6.4

测试中的平均数值

Samsung M471A1A43DB0-CPB 8GB

需要考虑的原因
Samsung M471A1A43DB0-CPB 8GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 9905584-016.A00LF 4GB

Samsung M471A1A43DB0-CPB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 27
读取速度，GB/s

14.2 12.3
写入速度，GB/s

8.5 6.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2277 1732

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BL16G32C16U4B.M8FB1 16GB

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Samsung M3 93T5750CZA-CE6 2GB

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A-DATA Technology VDQVE1B16 2GB

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Corsair CM4B8G1J2800K14K 8GB

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Smart Modular SF4641G8CK8I8GKSBG 8GB

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G Skill Intl F3-1333C9-4GIS 4GB

Golden Empire CL15-17-17 D4-3200 8GB

Golden Empire CL15-17-17 D4-3200 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

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INTENSO 5641160 8GB

INTENSO 5641160 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

Solarflare Communications CT16G4DFD824A.C16FBR 16GB