Kingston 9905584-016.A00LF 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

总分

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

差异规格评论

差异

Kingston 9905584-016.A00LF 4GB

需要考虑的原因
Kingston 9905584-016.A00LF 4GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 26

左右 -37% 更低的延时
更快的读取速度，GB/s

18.7 14.2

测试中的平均数值
更快的写入速度，GB/s

14.2 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston 9905584-016.A00LF 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 19
读取速度，GB/s

14.2 18.7
写入速度，GB/s

8.5 14.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2277 3220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Peak Electronics 256X64M-67E 2GB

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SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

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Crucial Technology CT16G4DFD8213.C16FAD 16GB

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SpecTek Incorporated ?????????????????? 2GB

Samsung M378A1K43EB2-CVF 8GB

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AMD R5S38G1601U2S 8GB

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G Skill Intl F4-4000C18-8GTZRB 8GB

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G Skill Intl F4-3200C15-8GTZSW 8GB