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Kingston 9905584-016.A00LF 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB

Kingston 9905584-016.A00LF 4GB vs SK Hynix V-GeN D4H4GL26A8TL 4GB

总分
star star star star star
Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

总分
star star star star star
SK Hynix V-GeN D4H4GL26A8TL 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

差异 规格 评论

差异

Kingston 9905584-016.A00LF 4GB 需要考虑的原因
Kingston 9905584-016.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 68
    左右 62% 更低的延时
  • 更快的写入速度，GB/s
    8.5 left arrow 8.1
    测试中的平均数值
SK Hynix V-GeN D4H4GL26A8TL 4GB 需要考虑的原因
SK Hynix V-GeN D4H4GL26A8TL 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 14.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston 9905584-016.A00LF 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 68
  • 读取速度，GB/s
    14.2 left arrow 16.2
  • 写入速度，GB/s
    8.5 left arrow 8.1
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2277 left arrow 1812

Kingston 9905584-016.A00LF 4GB RAM的比较

Kingston 99U5584-005.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston 9905584-016.A00LF 4GB
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SK Hynix V-GeN D4H4GL26A8TL 4GB
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内存RAM
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内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
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内存RAM
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内存RAM
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内存RAM
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SK Hynix HMA82GS6CJR8N-VK 16GB
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内存RAM
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内存RAM
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内存RAM
ASint Technology SSA302G08-EGN1C 4GB
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内存RAM
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内存RAM
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内存RAM
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Samsung M4 70T2953EZ3-CE6 1GB
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Crucial Technology CT8G4DFS632A.M4FE 8GB
内存RAM
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Kingston 9905403-156.A00LF 2GB
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内存RAM