Kingston 9905665-011.A00G 4GB vs AMD R748G2400U2S-UO 8GB

总分

Kingston 9905665-011.A00G 4GB

Kingston 9905665-011.A00G 4GB

总分

AMD R748G2400U2S-UO 8GB

AMD R748G2400U2S-UO 8GB

差异规格评论

差异

Kingston 9905665-011.A00G 4GB

需要考虑的原因
Kingston 9905665-011.A00G 4GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

AMD R748G2400U2S-UO 8GB

需要考虑的原因
AMD R748G2400U2S-UO 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 73

左右 -248% 更低的延时
更快的读取速度，GB/s

18.2 13.6

测试中的平均数值
更快的写入速度，GB/s

13.7 5.7

测试中的平均数值

规格

完整的技术规格清单

Kingston 9905665-011.A00G 4GB

AMD R748G2400U2S-UO 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

73 21
读取速度，GB/s

13.6 18.2
写入速度，GB/s

5.7 13.7
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1439 3120

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905458-017.A01LF 4GB

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Team Group Inc. TEAMGROUP-UD4-3733 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Shenzhen Xingmem Technology Corp 16GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Crucial Technology CT8G4DFD8213.C16FBR2 8GB

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Samsung M378B5673FH0-CH9 2GB

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Mushkin 991586 2GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3200C18-16GRS 16GB

G Skill Intl F4-3200C18-16GRS 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Corsair CMD16GX4M2B3466C16 8GB

Corsair CMD16GX4M2B3466C16 8GB

Samsung M393B5170FH0-CK0 4GB

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Kingston 9905743-044.A00G 16GB

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Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Crucial Technology CT8G4SFRA266.M16FG 8GB

Crucial Technology CT8G4SFRA266.M16FG 8GB