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Kingston 9905702-010.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
比较
Kingston 9905702-010.A00G 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
总分
Kingston 9905702-010.A00G 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905702-010.A00G 8GB
报告一个错误
更快的读取速度,GB/s
15.6
12.2
测试中的平均数值
更快的写入速度,GB/s
11.1
9.6
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
30
左右 -3% 更低的延时
规格
完整的技术规格清单
Kingston 9905702-010.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
30
29
读取速度,GB/s
15.6
12.2
写入速度,GB/s
11.1
9.6
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2792
2443
Kingston 9905702-010.A00G 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB RAM的比较
Samsung M393B1G70BH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9905702-010.A00G 8GB
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Kingston LV32D4U2S8ME-16X 16GB
Micron Technology 16KTF1G64HZ-1G9E2 8GB
G Skill Intl F4-2400C15-4GNT 4GB
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Crucial Technology CT4G4DFS8266.M8FG 4GB
Corsair CML8GX3M2A1600C9 4GB
G Skill Intl F4-2666C19-8GRS 8GB
Kingston 99U5584-007.A00LF 4GB
Corsair CMK8GX4M2B4200C19 4GB
Kingston 9905469-124.A00LF 4GB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology 8G4US2400.M8B1 8GB
报告一个错误
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