Kingston 9905702-010.A00G 8GB vs Tanbassh 8G 2666MHZ 8GB

总分

Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

总分

Tanbassh 8G 2666MHZ 8GB

Tanbassh 8G 2666MHZ 8GB

差异规格评论

差异

Kingston 9905702-010.A00G 8GB

需要考虑的原因
Kingston 9905702-010.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 50

左右 40% 更低的延时
更快的读取速度，GB/s

15.6 10.2

测试中的平均数值
更快的写入速度，GB/s

11.1 7.5

测试中的平均数值

Tanbassh 8G 2666MHZ 8GB

需要考虑的原因
Tanbassh 8G 2666MHZ 8GB

报告一个错误

更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Kingston 9905702-010.A00G 8GB

Tanbassh 8G 2666MHZ 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

30 50
读取速度，GB/s

15.6 10.2
写入速度，GB/s

11.1 7.5
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2792 2064

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DDR4 3600 2OZ 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Ramaxel Technology RMT3010EC58E8F1333 2GB

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Heoriady HX2666DT8G-TD 8GB

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Samsung M471A1K43CB1-CRCR 8GB

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Corsair CML8GX3M2A1600C9 4GB

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Samsung M378A2K43EB1-CWE 16GB

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A-DATA Technology DDR3 1600 4GB

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Kingmax Semiconductor GLLG42F-18---------- 8GB

Kingmax Semiconductor GLLG42F-18---------- 8GB

Kingston 9905584-016.A00LF 4GB

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G Skill Intl F4-2133C15-8GNS 8GB

G Skill Intl F4-2133C15-8GNS 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology BLS16G4S26BFSD.16FBD 16GB

Crucial Technology BLS16G4S26BFSD.16FBD 16GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

G Skill Intl F4-4000C15-8GTRG 8GB

G Skill Intl F4-4000C15-8GTRG 8GB