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Kingston 9965433-034.A00LF 4GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
比较
Kingston 9965433-034.A00LF 4GB vs Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
总分
Kingston 9965433-034.A00LF 4GB
总分
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9965433-034.A00LF 4GB
报告一个错误
低于PassMark测试中的延时,ns
42
52
左右 19% 更低的延时
需要考虑的原因
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
报告一个错误
更快的读取速度,GB/s
20.5
6.4
测试中的平均数值
更快的写入速度,GB/s
10.1
6.7
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston 9965433-034.A00LF 4GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
52
读取速度,GB/s
6.4
20.5
写入速度,GB/s
6.7
10.1
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1632
2472
Kingston 9965433-034.A00LF 4GB RAM的比较
Kingston 9905584-017.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
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Kingston HX316C10F/8 8GB
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3000C14-16GTZR 16GB
报告一个错误
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