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Kingston 9965516-112.A00LF 16GB
SK Hynix HMA41GR7MFR4N-TF 8GB

Kingston 9965516-112.A00LF 16GB vs SK Hynix HMA41GR7MFR4N-TF 8GB

总分
star star star star star
Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

总分
star star star star star
SK Hynix HMA41GR7MFR4N-TF 8GB

SK Hynix HMA41GR7MFR4N-TF 8GB

差异 规格 评论

差异

Kingston 9965516-112.A00LF 16GB 需要考虑的原因
Kingston 9965516-112.A00LF 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 52
    左右 37% 更低的延时
  • 更快的写入速度，GB/s
    9.9 left arrow 7.5
    测试中的平均数值
SK Hynix HMA41GR7MFR4N-TF 8GB 需要考虑的原因
SK Hynix HMA41GR7MFR4N-TF 8GB
报告一个错误
  • 更快的读取速度，GB/s
    10.1 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston 9965516-112.A00LF 16GB
SK Hynix HMA41GR7MFR4N-TF 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 52
  • 读取速度，GB/s
    9.1 left arrow 10.1
  • 写入速度，GB/s
    9.9 left arrow 7.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2279 left arrow 2176

Kingston 9965516-112.A00LF 16GB RAM的比较

Kingston 9965516-071.A00LF 16GB
Kingston 9965516-001.B00LF 8GB

SK Hynix HMA41GR7MFR4N-TF 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Samsung M471B5673FH0-CF8 2GB
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内存RAM
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Crucial Technology CT51264BA1339.C16F 4GB
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G Skill Intl F4-2133C15-8GRR2 8GB
内存RAM
Elpida EBJ41UF8BCS0-DJ-F 4GB
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Samsung M471B5273CH0-CH9 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Samsung M471A2K43CB1-CRCR 16GB
内存RAM
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内存RAM
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Kingston 9905469-124.A00LF 4GB
G Skill Intl F4-4000C16-16GTZRA 16GB
G Skill Intl F4-4000C16-16GTZRA 16GB
内存RAM