Kingston 9965516-112.A00LF 16GB vs SK Hynix HMA81GS6DJR8N-XN 8GB

总分

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

总分

SK Hynix HMA81GS6DJR8N-XN 8GB

SK Hynix HMA81GS6DJR8N-XN 8GB

差异规格评论

差异

Kingston 9965516-112.A00LF 16GB

需要考虑的原因
Kingston 9965516-112.A00LF 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 35

左右 6% 更低的延时

SK Hynix HMA81GS6DJR8N-XN 8GB

需要考虑的原因
SK Hynix HMA81GS6DJR8N-XN 8GB

报告一个错误

更快的读取速度，GB/s

15.8 9.1

测试中的平均数值
更快的写入速度，GB/s

12.4 9.9

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston 9965516-112.A00LF 16GB

SK Hynix HMA81GS6DJR8N-XN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 35
读取速度，GB/s

9.1 15.8
写入速度，GB/s

9.9 12.4
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2279 2852

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5273CH0-CH9 4GB

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Samsung M471A2K43EB1-CTD 16GB

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Kingston 9965516-112.A00LF 16GB

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SK Hynix HMA81GS6DJR8N-XN 8GB

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Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-3600C19-16GSXK 16GB

G Skill Intl F4-3600C19-16GSXK 16GB

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Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

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Kingston 99U5403-124.A00LF 8GB

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Kingston 9905700-053.A00G 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Corsair CMT32GX4M4K3600C16 8GB

Corsair CMT32GX4M4K3600C16 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Crucial Technology CT4G4SFS824A.M8FE 4GB

Crucial Technology CT4G4SFS824A.M8FE 4GB