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Kingston 9965525-140.A00LF 8GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB

Kingston 9965525-140.A00LF 8GB vs Crucial Technology BLS8G4D240FSCK.8FBD 8GB

总分
star star star star star
Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

总分
star star star star star
Crucial Technology BLS8G4D240FSCK.8FBD 8GB

Crucial Technology BLS8G4D240FSCK.8FBD 8GB

差异 规格 评论

差异

Kingston 9965525-140.A00LF 8GB 需要考虑的原因
Kingston 9965525-140.A00LF 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 33
    左右 9% 更低的延时
Crucial Technology BLS8G4D240FSCK.8FBD 8GB 需要考虑的原因
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.7 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.9 left arrow 6.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 9965525-140.A00LF 8GB
Crucial Technology BLS8G4D240FSCK.8FBD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 33
  • 读取速度，GB/s
    9.8 left arrow 14.7
  • 写入速度，GB/s
    6.4 left arrow 9.9
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1927 left arrow 2466

Kingston 9965525-140.A00LF 8GB RAM的比较

Super Talent SUPERTALENT 2GB
SK Hynix HMT351S6CFR8A-PB 4GB

Crucial Technology BLS8G4D240FSCK.8FBD 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
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G Skill Intl F4-3200C16-16GTZKW 16GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Team Group Inc. TEAMGROUP-UD4-3866 8GB
内存RAM
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内存RAM
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Samsung M3 78T2863QZS-CF7 1GB
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内存RAM
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Samsung M3 78T3354BZ0-CCC 256MB
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Micron Technology 18ASF2G72PDZ-2G3A1 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix HMA451R7AFR8N-UH 4GB
SK Hynix HMA451R7AFR8N-UH 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
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Micron Technology 4ATF51264HZ-2G3B1 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
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Samsung M474A1G43EB1-CRC 8GB
内存RAM
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Samsung M471A2K43DB1-CWE 16GB
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Samsung M471A2G43AB2-CWE 16GB
内存RAM
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