Kingston 9965525-140.A00LF 8GB vs Micron Technology 16ATF2G64HZ-2G6J1 16GB

总分

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

总分

Micron Technology 16ATF2G64HZ-2G6J1 16GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

差异规格评论

差异

Kingston 9965525-140.A00LF 8GB

需要考虑的原因
Kingston 9965525-140.A00LF 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 38

左右 21% 更低的延时

Micron Technology 16ATF2G64HZ-2G6J1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G6J1 16GB

报告一个错误

更快的读取速度，GB/s

15.2 9.8

测试中的平均数值
更快的写入速度，GB/s

11.4 6.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-140.A00LF 8GB

Micron Technology 16ATF2G64HZ-2G6J1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 38
读取速度，GB/s

9.8 15.2
写入速度，GB/s

6.4 11.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1927 2821

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9965525-140.A00LF 8GB

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Micron Technology 16ATF2G64HZ-2G6J1 16GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Gold Key Technology Co Ltd NMUD480E85-3000D 8GB

Gold Key Technology Co Ltd NMUD480E85-3000D 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Vasekey M378A1K43BB2-CPB 8GB

Vasekey M378A1K43BB2-CPB 8GB

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Micron Technology 16ATF4G64HZ-3G2E2 32GB

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G Skill Intl F5-6400J3239G16G 16GB

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G Skill Intl F4-2800C15-4GTZ 4GB

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Samsung M3 78T2953EZ3-CF7 1GB

Corsair CMD32GX4M4B3866C18 8GB

Corsair CMD32GX4M4B3866C18 8GB