Kingston 9965525-144.A00LF 8GB vs Corsair CMD16GX4M2E4000C19 8GB

总分

Kingston 9965525-144.A00LF 8GB

Kingston 9965525-144.A00LF 8GB

总分

Corsair CMD16GX4M2E4000C19 8GB

Corsair CMD16GX4M2E4000C19 8GB

差异规格评论

差异

Kingston 9965525-144.A00LF 8GB

需要考虑的原因
Kingston 9965525-144.A00LF 8GB

报告一个错误

Corsair CMD16GX4M2E4000C19 8GB

需要考虑的原因
Corsair CMD16GX4M2E4000C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 70

左右 -169% 更低的延时
更快的读取速度，GB/s

18.5 6.5

测试中的平均数值
更快的写入速度，GB/s

14.9 4.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-144.A00LF 8GB

Corsair CMD16GX4M2E4000C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

70 26
读取速度，GB/s

6.5 18.5
写入速度，GB/s

4.6 14.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1264 3475

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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PUSKILL DDR3 1600 8G 8GB

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Essencore Limited KD48GS88A-26N1600 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Micron Technology 8ATF1G64AZ-2G3B1 8GB

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Samsung M391B5673EH1-CH9 2GB

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Crucial Technology BLS4G4D240FSA.8FAR 4GB

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Jinyu CL16-16-16 D4-2400 8GB

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Samsung M471B5674QH0-YK0 2GB

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Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Kingston KHX3466C17D4/16GX 16GB

Kingston KHX3466C17D4/16GX 16GB

G Skill Intl F4-3600C16-8GTZKK 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

G Skill Intl F4-4266C19-8GTZSW 8GB

G Skill Intl F4-4266C19-8GTZSW 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G

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