Kingston 9965525-144.A00LF 8GB vs G Skill Intl F4-4000C18-8GTZSW 8GB

总分

Kingston 9965525-144.A00LF 8GB

Kingston 9965525-144.A00LF 8GB

总分

G Skill Intl F4-4000C18-8GTZSW 8GB

G Skill Intl F4-4000C18-8GTZSW 8GB

差异规格评论

差异

Kingston 9965525-144.A00LF 8GB

需要考虑的原因
Kingston 9965525-144.A00LF 8GB

报告一个错误

G Skill Intl F4-4000C18-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-4000C18-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 70

左右 -133% 更低的延时
更快的读取速度，GB/s

17.2 6.5

测试中的平均数值
更快的写入速度，GB/s

17.0 4.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-144.A00LF 8GB

G Skill Intl F4-4000C18-8GTZSW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

70 30
读取速度，GB/s

6.5 17.2
写入速度，GB/s

4.6 17.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1264 3773

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965525-144.A00LF 8GB

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G Skill Intl F4-4000C18-8GTZSW 8GB

A-DATA Technology DDR3 1600 4GB

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Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Corsair CMSX16GX4M1A2400C16 16GB

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Kingston 9905403-515.A00LF 8GB

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Samsung M378A1K43CB2-CRC 8GB

Samsung M378A1K43CB2-CRC 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB