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Kingston 9965525-155.A00LF 8GB
Crucial Technology BLS8G4D26BFSE.16FD2 8GB

Kingston 9965525-155.A00LF 8GB vs Crucial Technology BLS8G4D26BFSE.16FD2 8GB

总分
star star star star star
Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSE.16FD2 8GB

Crucial Technology BLS8G4D26BFSE.16FD2 8GB

差异 规格 评论

差异

Kingston 9965525-155.A00LF 8GB 需要考虑的原因
Kingston 9965525-155.A00LF 8GB
报告一个错误
Crucial Technology BLS8G4D26BFSE.16FD2 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSE.16FD2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 69
    左右 -214% 更低的延时
  • 更快的读取速度，GB/s
    16.5 left arrow 6.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 3.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston 9965525-155.A00LF 8GB
Crucial Technology BLS8G4D26BFSE.16FD2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 22
  • 读取速度，GB/s
    6.4 left arrow 16.5
  • 写入速度，GB/s
    3.7 left arrow 12.2
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1129 left arrow 2809

Kingston 9965525-155.A00LF 8GB RAM的比较

SK Hynix HMT325U6CFR8C-H9 2GB
Samsung M391B5773DH0-CK0 2GB

Crucial Technology BLS8G4D26BFSE.16FD2 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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Corsair CMR16GX4M2D3000C16 8GB
内存RAM
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Kingston MSI16D3LS1MNG/8G 8GB
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Samsung M471A1K43CB1-CRC 8GB
内存RAM
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Crucial Technology CT25664BA160B.C16F 2GB
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