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Kingston 9965525-155.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
比较
Kingston 9965525-155.A00LF 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
总分
Kingston 9965525-155.A00LF 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9965525-155.A00LF 8GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
报告一个错误
低于PassMark测试中的延时,ns
25
69
左右 -176% 更低的延时
更快的读取速度,GB/s
14.8
6.4
测试中的平均数值
更快的写入速度,GB/s
8.9
3.7
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston 9965525-155.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
69
25
读取速度,GB/s
6.4
14.8
写入速度,GB/s
3.7
8.9
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1129
2542
Kingston 9965525-155.A00LF 8GB RAM的比较
SK Hynix HMT325U6CFR8C-H9 2GB
Samsung M391B5773DH0-CK0 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB RAM的比较
Samsung M3 78T3354BZ0-CCC 256MB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
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Corsair CMW128GX4M4D3600C18 32GB
Kingston KVR800D2N6/2G 2GB
Corsair CMSO16GX4M1A2133C15 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-2400C16-8GFXR 8GB
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Kingston 9905458-017.A01LF 4GB
Essencore Limited KD4AGS88C-32N220D 16GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BL16G26C16U4B.16FE 16GB
AMD R538G1601U2S-UO 8GB
Kingston 9965596-029.B00G 4GB
报告一个错误
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Bug description
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