Kingston 9965662-016.A00G 16GB vs Crucial Technology BLS4G4D240FSA.M8FADG 4GB

总分

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

总分

Crucial Technology BLS4G4D240FSA.M8FADG 4GB

Crucial Technology BLS4G4D240FSA.M8FADG 4GB

差异规格评论

差异

Kingston 9965662-016.A00G 16GB

需要考虑的原因
Kingston 9965662-016.A00G 16GB

报告一个错误

Crucial Technology BLS4G4D240FSA.M8FADG 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSA.M8FADG 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 39

左右 -70% 更低的延时
更快的读取速度，GB/s

16.6 7.9

测试中的平均数值
更快的写入速度，GB/s

12.4 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

Kingston 9965662-016.A00G 16GB

Crucial Technology BLS4G4D240FSA.M8FADG 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

39 23
读取速度，GB/s

7.9 16.6
写入速度，GB/s

7.8 12.4
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1939 2785

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung 1600 CL10 Series 8GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

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Micron Technology 36ASF4G72LZ-2G3A1 32GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

G Skill Intl F4-3600C19-16GTRS 16GB

G Skill Intl F4-3600C19-16GTRS 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

Solarflare Communications CT16G4DFD824A.C16FBR 16GB