Kingston 9965662-016.A00G 16GB vs Samsung M471A4G43BB1-CWE 32GB

总分

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

总分

Samsung M471A4G43BB1-CWE 32GB

Samsung M471A4G43BB1-CWE 32GB

差异规格评论

差异

Kingston 9965662-016.A00G 16GB

需要考虑的原因
Kingston 9965662-016.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

39 70

左右 44% 更低的延时

Samsung M471A4G43BB1-CWE 32GB

需要考虑的原因
Samsung M471A4G43BB1-CWE 32GB

报告一个错误

更快的读取速度，GB/s

15 7.9

测试中的平均数值
更快的写入速度，GB/s

14.3 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51 更高的带宽

规格

完整的技术规格清单

Kingston 9965662-016.A00G 16GB

Samsung M471A4G43BB1-CWE 32GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

39 70
读取速度，GB/s

7.9 15.0
写入速度，GB/s

7.8 14.3
内存带宽，mbps

17000 25600

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1939 2519

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965662-016.A00G 16GB

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Samsung M471A4G43BB1-CWE 32GB

Corsair CMZ32GX3M4A1600C9 8GB

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Samsung M378A1K43EB2-CWE 8GB

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Corsair CMK16GX4M2Z3600C20 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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G Skill Intl F4-3000C16-8GISB 8GB

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Kingston 9905403-011.A03LF 2GB

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Good Wealth Technology Ltd. 8GB

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A-DATA Technology DQKD1A08 1GB

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Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N

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G Skill Intl F4-3600C19-8GSXWB 8GB

Ramaxel Technology RMSA3260MD78HAF-2666 8GB

Ramaxel Technology RMSA3260MD78HAF-2666 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Hewlett-Packard 7EH68AA# 16GB

Hewlett-Packard 7EH68AA# 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB