Kingston 99P5474-014.A00LF 4GB vs Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

总分

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

总分

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

差异规格评论

差异

Kingston 99P5474-014.A00LF 4GB

需要考虑的原因
Kingston 99P5474-014.A00LF 4GB

报告一个错误

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 -17% 更低的延时
更快的读取速度，GB/s

16.8 11.2

测试中的平均数值
更快的写入速度，GB/s

12.5 7.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99P5474-014.A00LF 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 23
读取速度，GB/s

11.2 16.8
写入速度，GB/s

7.1 12.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1936 2795

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) PSD416G320081 16GB

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Samsung M3 78T2863QZS-CF7 1GB

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A-DATA Technology AO1P32NCSV1-BDBS 16GB

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Apacer Technology 78.CAGMT.40C0B 8GB

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Corsair MK16GX44A2666C16 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology M471A1K43BB1-CRC 8GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

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G Skill Intl F4-3000C14-8GTZR 8GB

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Panram International Corporation PUD42400C154G2NJK 4GB

Panram International Corporation PUD42400C154G2NJK 4GB