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Kingston 99P5474-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
比较
Kingston 99P5474-014.A00LF 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
总分
Kingston 99P5474-014.A00LF 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99P5474-014.A00LF 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
29
左右 7% 更低的延时
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
报告一个错误
更快的读取速度,GB/s
13.8
11.2
测试中的平均数值
更快的写入速度,GB/s
11.0
7.1
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston 99P5474-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
29
读取速度,GB/s
11.2
13.8
写入速度,GB/s
7.1
11.0
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1936
2690
Kingston 99P5474-014.A00LF 4GB RAM的比较
Kingston 99P5471-004.A01LF 4GB
Corsair CMK16GX4M1E3200C16 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB RAM的比较
Samsung M323R2GA3BB0-CQKOD 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N
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Smart Modular SG564568FG8N6KF-Z2 2GB
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Elpida EBJ41UF8BDU5-GN-F 4GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Samsung M471A2K43CB1-CTD 16GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
报告一个错误
×
Bug description
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