Kingston 99P5474-014.A00LF 4GB vs Kingston KMKYF9-HYA 8GB

总分

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

总分

Kingston KMKYF9-HYA 8GB

Kingston KMKYF9-HYA 8GB

差异规格评论

差异

Kingston 99P5474-014.A00LF 4GB

需要考虑的原因
Kingston 99P5474-014.A00LF 4GB

报告一个错误

Kingston KMKYF9-HYA 8GB

需要考虑的原因
Kingston KMKYF9-HYA 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 -17% 更低的延时
更快的读取速度，GB/s

16.9 11.2

测试中的平均数值
更快的写入速度，GB/s

12.8 7.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 99P5474-014.A00LF 4GB

Kingston KMKYF9-HYA 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 23
读取速度，GB/s

11.2 16.9
写入速度，GB/s

7.1 12.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1936 2899

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

Kingston KMKYF9-HYA 8GB

Kingston KMKYF9-HYA 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-3300C16-8GTZKW 8GB

G Skill Intl F4-3300C16-8GTZKW 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

Micron Technology 18ASF1G72PDZ-2G6E1 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Corsair CM4B8G7L2666A16K2-O 8GB

Corsair CM4B8G7L2666A16K2-O 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Corsair CMWX16GC3000C15W4 16GB

Corsair CMWX16GC3000C15W4 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology CT16G4DFD824A.M16FH 16GB

Crucial Technology CT16G4DFD824A.M16FH 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Samsung M378A5244CB0-CWE 4GB

Samsung M378A5244CB0-CWE 4GB