Kingston 99U5315-023.A00LF 512MB vs Corsair CMV16GX4M1A2133C15 16GB

总分

Kingston 99U5315-023.A00LF 512MB

Kingston 99U5315-023.A00LF 512MB

总分

Corsair CMV16GX4M1A2133C15 16GB

Corsair CMV16GX4M1A2133C15 16GB

差异规格评论

差异

Kingston 99U5315-023.A00LF 512MB

需要考虑的原因
Kingston 99U5315-023.A00LF 512MB

报告一个错误

更快的读取速度，GB/s

4 15.2

测试中的平均数值

Corsair CMV16GX4M1A2133C15 16GB

需要考虑的原因
Corsair CMV16GX4M1A2133C15 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 44

左右 -38% 更低的延时
更快的写入速度，GB/s

10.7 1,769.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingston 99U5315-023.A00LF 512MB

Corsair CMV16GX4M1A2133C15 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

44 32
读取速度，GB/s

4,482.7 15.2
写入速度，GB/s

1,769.9 10.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

525 2918

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung DDR3 8GB 1600MHz 8GB

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Crucial Technology CT4G4SFS8213.C8FDD2 4GB

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Micron Technology 8ATF1G64HZ-2G3B2 8GB

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Kingston 99U5315-023.A00LF 512MB

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Kingston 99U5700-014.A00G 8GB

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Kingston 99U5474-023.A00LF 4GB

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V-Color Technology Inc. TA48G32S816SK 8GB

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Kingston 9905403-447.A00LF 4GB

Samsung M378A4G43AB2-CVF 32GB

Samsung M378A4G43AB2-CVF 32GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

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Kingston 9965643-002.A01G 4GB

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Mushkin 992017 (997017) 8GB

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Kingston 9905734-063.A00G 32GB