Kingston 99U5403-036.A00G 4GB vs G Skill Intl F4-3000C16-16GTRG 16GB

总分

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

总分

G Skill Intl F4-3000C16-16GTRG 16GB

G Skill Intl F4-3000C16-16GTRG 16GB

差异规格评论

差异

Kingston 99U5403-036.A00G 4GB

需要考虑的原因
Kingston 99U5403-036.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 28

左右 11% 更低的延时

G Skill Intl F4-3000C16-16GTRG 16GB

需要考虑的原因
G Skill Intl F4-3000C16-16GTRG 16GB

报告一个错误

更快的读取速度，GB/s

18.4 15.7

测试中的平均数值
更快的写入速度，GB/s

16.1 9.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 99U5403-036.A00G 4GB

G Skill Intl F4-3000C16-16GTRG 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 28
读取速度，GB/s

15.7 18.4
写入速度，GB/s

9.8 16.1
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2388 3772

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5273DH0-CH9 4GB

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SK Hynix HMA425S6AFR6N-UH 2GB

SK Hynix HMA425S6AFR6N-UH 2GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

SK Hynix HMA82GS6AFR8N-UH 16GB

SK Hynix HMA82GS6AFR8N-UH 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Apacer Technology 78.CAGR9.40C0B 8GB

Apacer Technology 78.CAGR9.40C0B 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Avant Technology W6451U66J5213ND 4GB

Avant Technology W6451U66J5213ND 4GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Kingston 9905702-136.A00G 8GB

Kingston 9905702-136.A00G 8GB