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Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
比较
Kingston 99U5403-036.A00G 4GB vs G Skill Intl F4-3200C14-16GTZDCB 16GB
总分
Kingston 99U5403-036.A00G 4GB
总分
G Skill Intl F4-3200C14-16GTZDCB 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5403-036.A00G 4GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3200C14-16GTZDCB 16GB
报告一个错误
低于PassMark测试中的延时,ns
21
25
左右 -19% 更低的延时
更快的读取速度,GB/s
19.5
15.7
测试中的平均数值
更快的写入速度,GB/s
13.5
9.8
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
21
读取速度,GB/s
15.7
19.5
写入速度,GB/s
9.8
13.5
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2388
3512
Kingston 99U5403-036.A00G 4GB RAM的比较
Kingston 9905403-447.A00LF 4GB
Team Group Inc. 76TT16NUSL2R8-4G 4GB
G Skill Intl F4-3200C14-16GTZDCB 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Micron Technology 16JTF25664AZ-1G4F1 2GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C16-4GVKB 4GB
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
G Skill Intl F3-1333C9-4GIS 4GB
Samsung M392A4K40BM0-CRC 32GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology BL8G32C16U4B.8FE 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology BL16G32C16S4B.16FE 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2666C15-4GRR 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston 9905599-025.A00G 8GB
Kingston 99U5403-036.A00G 4GB
Kingston 9905744-062.A00G 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
Samsung M393B5270CH0-CH9 4GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
Avant Technology F6451U64F9333G 4GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLS8G4S240FSD.16FAR 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CM4X8GF2400C16S4 8GB
报告一个错误
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Bug description
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