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Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
比较
Kingston 99U5403-036.A00G 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
总分
Kingston 99U5403-036.A00G 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 99U5403-036.A00G 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
60
左右 58% 更低的延时
更快的读取速度,GB/s
15.7
7.8
测试中的平均数值
更快的写入速度,GB/s
9.8
2.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
报告一个错误
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
60
读取速度,GB/s
15.7
7.8
写入速度,GB/s
9.8
2.8
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2388
1505
Kingston 99U5403-036.A00G 4GB RAM的比较
Kingston 9905403-447.A00LF 4GB
Team Group Inc. 76TT16NUSL2R8-4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB RAM的比较
Samsung M393B1K70QB0-CK0 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3600C17-8GTZR 8GB
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Kingston 9965669-025.A00G 8GB
Samsung M393B5270CH0-CH9 4GB
Kingston 9905711-035.A00G 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston 9905712-048.A00G 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-3000C15-4GRBB 4GB
G Skill Intl F3-1866C8-8GTX 8GB
Crucial Technology BL32G32C16U4R.M16FB1 32GB
报告一个错误
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Bug description
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