RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston 99U5403-036.A00G 4GB
Hyundai Inc GR26C16S8K2HU416 8GB

Kingston 99U5403-036.A00G 4GB vs Hyundai Inc GR26C16S8K2HU416 8GB

总分
star star star star star
Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

总分
star star star star star
Hyundai Inc GR26C16S8K2HU416 8GB

Hyundai Inc GR26C16S8K2HU416 8GB

差异 规格 评论

差异

Kingston 99U5403-036.A00G 4GB 需要考虑的原因
Kingston 99U5403-036.A00G 4GB
报告一个错误
Hyundai Inc GR26C16S8K2HU416 8GB 需要考虑的原因
Hyundai Inc GR26C16S8K2HU416 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 25
    左右 -14% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 15.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 9.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Kingston 99U5403-036.A00G 4GB
Hyundai Inc GR26C16S8K2HU416 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 22
  • 读取速度，GB/s
    15.7 left arrow 17.4
  • 写入速度，GB/s
    9.8 left arrow 13.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2388 left arrow 3182

Kingston 99U5403-036.A00G 4GB RAM的比较

Kingston 9905403-447.A00LF 4GB
Team Group Inc. 76TT16NUSL2R8-4G 4GB

Hyundai Inc GR26C16S8K2HU416 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Team Group Inc. TEAMGROUP-SD4-3200 16GB
Team Group Inc. TEAMGROUP-SD4-3200 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avant Technology W641GU42J9266NB 8GB
Avant Technology W641GU42J9266NB 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMK16GX4M2K3600C19 8GB
Corsair CMK16GX4M2K3600C19 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-32GVK 32GB
G Skill Intl F4-3200C16-32GVK 32GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Panram International Corporation W4U2666P-8G 8GB
Panram International Corporation W4U2666P-8G 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Kingston KHX3200C20S4/8G 8GB
Kingston KHX3200C20S4/8G 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Hyundai Inc GR26C16S8K2HU416 8GB
Hyundai Inc GR26C16S8K2HU416 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-2400C15-16GIS 16GB
G Skill Intl F4-2400C15-16GIS 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
G Skill Intl F4-3333C16-8GTZSW 8GB
G Skill Intl F4-3333C16-8GTZSW 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology CT16G4DFD8266.M16FD 16GB
Crucial Technology CT16G4DFD8266.M16FD 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Panram International Corporation PUD43000C154G4NJW 4GB
Panram International Corporation PUD43000C154G4NJW 4GB
内存RAM