Kingston 99U5403-465.A00LF 8GB vs Samsung M378A1K43DB2-CTD 8GB

总分

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

总分

Samsung M378A1K43DB2-CTD 8GB

Samsung M378A1K43DB2-CTD 8GB

差异规格评论

差异

Kingston 99U5403-465.A00LF 8GB

需要考虑的原因
Kingston 99U5403-465.A00LF 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时

Samsung M378A1K43DB2-CTD 8GB

需要考虑的原因
Samsung M378A1K43DB2-CTD 8GB

报告一个错误

更快的读取速度，GB/s

16 13.3

测试中的平均数值
更快的写入速度，GB/s

12.1 8.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 99U5403-465.A00LF 8GB

Samsung M378A1K43DB2-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

13.3 16.0
写入速度，GB/s

8.3 12.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2320 2947

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Micron Technology 16ATF2G64AZ-2G3E1 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology CT8G4SFS824A.M8FH 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

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