Kingston 99U5428-018.A00LF 8GB vs Samsung M471A2K43DB1-CTD 16GB

总分

Kingston 99U5428-018.A00LF 8GB

Kingston 99U5428-018.A00LF 8GB

总分

Samsung M471A2K43DB1-CTD 16GB

Samsung M471A2K43DB1-CTD 16GB

差异规格评论

差异

Kingston 99U5428-018.A00LF 8GB

需要考虑的原因
Kingston 99U5428-018.A00LF 8GB

报告一个错误

Samsung M471A2K43DB1-CTD 16GB

需要考虑的原因
Samsung M471A2K43DB1-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 47

左右 -34% 更低的延时
更快的读取速度，GB/s

15.2 12.2

测试中的平均数值
更快的写入速度，GB/s

10.7 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston 99U5428-018.A00LF 8GB

Samsung M471A2K43DB1-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 35
读取速度，GB/s

12.2 15.2
写入速度，GB/s

8.2 10.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2128 2773

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Smart Modular SG564568FG8N6KF-Z2 2GB

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GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB

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Crucial Technology BL8G26C16U4W.8FD 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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Samsung M378A2K43DB1-CTD 16GB

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SK Hynix HMA82GU6CJR8N-VK 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Golden Empire CL17-17-17 D4-2400 16GB

Golden Empire CL17-17-17 D4-2400 16GB

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

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Essencore Limited IM48GU88N21-FFFHM 8GB

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