Kingston 99U5428-101.A00LF 8GB vs Kingston 9965600-018.A00G 16GB

总分

Kingston 99U5428-101.A00LF 8GB

Kingston 99U5428-101.A00LF 8GB

总分

Kingston 9965600-018.A00G 16GB

Kingston 9965600-018.A00G 16GB

差异规格评论

差异

Kingston 99U5428-101.A00LF 8GB

需要考虑的原因
Kingston 99U5428-101.A00LF 8GB

报告一个错误

Kingston 9965600-018.A00G 16GB

需要考虑的原因
Kingston 9965600-018.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 80

左右 -150% 更低的延时
更快的读取速度，GB/s

10.4 5.9

测试中的平均数值
更快的写入速度，GB/s

8.9 3.4

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 99U5428-101.A00LF 8GB

Kingston 9965600-018.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

80 32
读取速度，GB/s

5.9 10.4
写入速度，GB/s

3.4 8.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

968 2386

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B5170FH0-CK0 4GB

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InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

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Corsair CMK16GX4M2E4333C19 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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AMD AE34G1601U1 4GB

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Corsair CM4X16GE2666C18S4 16GB

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SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Avant Technology J642GU42J7240N2 16GB

Avant Technology J642GU42J7240N2 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Corsair CMSX64GX4M2A3200C22 32GB

Corsair CMSX64GX4M2A3200C22 32GB

Kingston MSI16D3LS1MNG/8G 8GB

Kingston MSI16D3LS1MNG/8G 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

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Mushkin MR[A/B]4U320GJJM8G 8GB

Mushkin MR[A/B]4U320GJJM8G 8GB