Kingston 99U5429-007.A00LF 2GB vs Corsair CMW32GX4M2D3600C18 16GB

总分

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

总分

Corsair CMW32GX4M2D3600C18 16GB

Corsair CMW32GX4M2D3600C18 16GB

差异规格评论

差异

Kingston 99U5429-007.A00LF 2GB

需要考虑的原因
Kingston 99U5429-007.A00LF 2GB

报告一个错误

更快的读取速度，GB/s

3 19

测试中的平均数值
更快的写入速度，GB/s

2,036.1 15.2

测试中的平均数值

Corsair CMW32GX4M2D3600C18 16GB

需要考虑的原因
Corsair CMW32GX4M2D3600C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 75

左右 -150% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingston 99U5429-007.A00LF 2GB

Corsair CMW32GX4M2D3600C18 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 30
读取速度，GB/s

3,986.4 19.0
写入速度，GB/s

2,036.1 15.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

714 3655

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A1K43EB1-CWE 8GB

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G Skill Intl F5-5600J4040C16G 16GB

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Samsung M474A2K43BB1-CPB 16GB

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Team Group Inc. TEAMGROUP-UD4-4300 8GB

Team Group Inc. TEAMGROUP-UD4-4300 8GB

Samsung M471B5173QH0-YK0 4GB

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SK Hynix GKE800SO102408-2400 8GB

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Kingston 9905403-038.A00LF 4GB

Patriot Memory (PDP Systems) 3733 C17 Series 8GB

Patriot Memory (PDP Systems) 3733 C17 Series 8GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

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Chun Well Technology Holding Limited CL18-22-22 D4-3600

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Corsair CMD32GX4M4B3866C18 8GB

Corsair CMD32GX4M4B3866C18 8GB