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Kingston 99U5429-007.A00LF 2GB
G Skill Intl F4-3600C17-16GTZKW 16GB

Kingston 99U5429-007.A00LF 2GB vs G Skill Intl F4-3600C17-16GTZKW 16GB

总分
star star star star star
Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

总分
star star star star star
G Skill Intl F4-3600C17-16GTZKW 16GB

G Skill Intl F4-3600C17-16GTZKW 16GB

差异 规格 评论

差异

Kingston 99U5429-007.A00LF 2GB 需要考虑的原因
Kingston 99U5429-007.A00LF 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 19.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,036.1 left arrow 15.7
    测试中的平均数值
G Skill Intl F4-3600C17-16GTZKW 16GB 需要考虑的原因
G Skill Intl F4-3600C17-16GTZKW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 75
    左右 -159% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Kingston 99U5429-007.A00LF 2GB
G Skill Intl F4-3600C17-16GTZKW 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 29
  • 读取速度，GB/s
    3,986.4 left arrow 19.5
  • 写入速度，GB/s
    2,036.1 left arrow 15.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    714 left arrow 3757

Kingston 99U5429-007.A00LF 2GB RAM的比较

Samsung M378T5663DZ3-CF7 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

G Skill Intl F4-3600C17-16GTZKW 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3600C19-8GSXWB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Inmos + 256MB
Inmos + 256MB
内存RAM
Crucial Technology CT8G4DFRA32A.M4FF 8GB
Crucial Technology CT8G4DFRA32A.M4FF 8GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
G Skill Intl F4-3600C17-16GTZKW 16GB
G Skill Intl F4-3600C17-16GTZKW 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Essencore Limited KD4AGU88C-26N1900 16GB
Essencore Limited KD4AGU88C-26N1900 16GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston KHX4000C19D4/8GX 8GB
Kingston KHX4000C19D4/8GX 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT16G4DFD832A.C16FJ 16GB
Crucial Technology CT16G4DFD832A.C16FJ 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-4400C16-8GTZR 8GB
G Skill Intl F4-4400C16-8GTZR 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston KHX2666C15/16GX 16GB
Kingston KHX2666C15/16GX 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-2400C15-16GFX 16GB
G Skill Intl F4-2400C15-16GFX 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Samsung M471A1K43BB0-CPB 8GB
Samsung M471A1K43BB0-CPB 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Ramaxel Technology RMUA5110KE68H9F-2400 4GB
Ramaxel Technology RMUA5110KE68H9F-2400 4GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB
内存RAM