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Kingston 99U5429-007.A00LF 2GB
Virtium Technology Inc. VL33A1G63F-N6S 8GB

Kingston 99U5429-007.A00LF 2GB vs Virtium Technology Inc. VL33A1G63F-N6S 8GB

总分
star star star star star
Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

总分
star star star star star
Virtium Technology Inc. VL33A1G63F-N6S 8GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB

差异 规格 评论

差异

Kingston 99U5429-007.A00LF 2GB 需要考虑的原因
Kingston 99U5429-007.A00LF 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 11.1
    测试中的平均数值
Virtium Technology Inc. VL33A1G63F-N6S 8GB 需要考虑的原因
Virtium Technology Inc. VL33A1G63F-N6S 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 75
    左右 -134% 更低的延时
  • 更快的写入速度，GB/s
    9.2 left arrow 2,036.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Kingston 99U5429-007.A00LF 2GB
Virtium Technology Inc. VL33A1G63F-N6S 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 32
  • 读取速度，GB/s
    3,986.4 left arrow 11.1
  • 写入速度，GB/s
    2,036.1 left arrow 9.2
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    714 left arrow 2386

Kingston 99U5429-007.A00LF 2GB RAM的比较

Samsung M378T5663DZ3-CF7 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Virtium Technology Inc. VL33A1G63F-N6S 8GB
Virtium Technology Inc. VL33A1G63F-N6S 8GB
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Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
Apacer Technology 78.CAGN7.4000C 8GB
Apacer Technology 78.CAGN7.4000C 8GB
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Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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G Skill Intl F4-3600C19-16GSXKB 16GB
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Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
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Team Group Inc. DDR4 3000 4GB
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Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
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Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Micron Technology V-GeN D4V16GL24A8R 16GB
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Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
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Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
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Crucial Technology CT16G4S24AM.M16FE 16GB
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Kingston KP223C-ELD 2GB
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G Skill Intl F4-2133C15-4GRR 4GB
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Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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Gold Key Technology Co Ltd NMUD480E86-3200 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-4000C18-32GTZR 32GB
G Skill Intl F4-4000C18-32GTZR 32GB
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Corsair CML16GX3M2A1600C10 8GB
G Skill Intl F4-3333C16-8GTZ 8GB
G Skill Intl F4-3333C16-8GTZ 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
内存RAM