Kingston 99U5458-002.A00LF 2GB vs Samsung M393A2G40DB0-CPB 16GB

总分

Kingston 99U5458-002.A00LF 2GB

Kingston 99U5458-002.A00LF 2GB

总分

Samsung M393A2G40DB0-CPB 16GB

Samsung M393A2G40DB0-CPB 16GB

差异规格评论

差异

Kingston 99U5458-002.A00LF 2GB

需要考虑的原因
Kingston 99U5458-002.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

37 53

左右 30% 更低的延时
更快的读取速度，GB/s

13.5 10.3

测试中的平均数值
更快的写入速度，GB/s

8.5 8.1

测试中的平均数值

Samsung M393A2G40DB0-CPB 16GB

需要考虑的原因
Samsung M393A2G40DB0-CPB 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5458-002.A00LF 2GB

Samsung M393A2G40DB0-CPB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 53
读取速度，GB/s

13.5 10.3
写入速度，GB/s

8.5 8.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1795 2333

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3600C19-8GSXF 8GB

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Crucial Technology CT4G4DFS824A.C8FADP 4GB

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Micron Technology 16GB 2133MHz DIMM 16GB

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Apacer Technology 78.C1GET.9K10C 8GB

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SK Hynix HMA84GR7AFR4N-UH 32GB

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Hexon Technology Pte Ltd HEXON 1GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Corsair CMV8GX4M1A2400C16 8GB

Corsair CMV8GX4M1A2400C16 8GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

G Skill Intl F4-3200C16-16GTZ 16GB

G Skill Intl F4-3200C16-16GTZ 16GB

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Kingston KHX1600C9D3/8G 8GB

Smart Modular SF4641G8CK8IWGKSEG 8GB

Smart Modular SF4641G8CK8IWGKSEG 8GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Corsair CMK128GX4M4A2400C16 32GB

Corsair CMK128GX4M4A2400C16 32GB

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

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Corsair CMU64GX4M4A2666C16 16GB