Kingston 99U5458-008.A00LF 4GB vs G Skill Intl F4-4400C16-8GTZR 8GB

总分

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

总分

G Skill Intl F4-4400C16-8GTZR 8GB

G Skill Intl F4-4400C16-8GTZR 8GB

差异规格评论

差异

Kingston 99U5458-008.A00LF 4GB

需要考虑的原因
Kingston 99U5458-008.A00LF 4GB

报告一个错误

G Skill Intl F4-4400C16-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4400C16-8GTZR 8GB

报告一个错误

更快的读取速度，GB/s

21.9 13.3

测试中的平均数值
更快的写入速度，GB/s

19.1 9.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5458-008.A00LF 4GB

G Skill Intl F4-4400C16-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

13.3 21.9
写入速度，GB/s

9.1 19.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2324 4044

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS8G4D32AESCK.M8FE 8GB

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Samsung M393B1K70CH0-YH9 8GB

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Micron Technology 8ATF1G64AZ-3G2E1 8GB

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Crucial Technology BL16G26C16U4W.16FD 16GB

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Samsung M393B1K70CH0-YH9 8GB

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Micron Technology 16ATF2G64HZ-3G2E1 16GB

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Samsung M393B1K70CH0-YH9 8GB

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G Skill Intl F4-3600C16-8GTRGC 8GB

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Samsung M4 70T2864QZ3-CF7 1GB

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Crucial Technology BL8G26C16U4B.8FD 8GB

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Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-3600C19-16GSXW 16GB

G Skill Intl F4-3600C19-16GSXW 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology BL8G36C16U4R.M8FE1 8GB

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SK Hynix HMT41GU7MFR8A-H9 8GB

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