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Kingston 99U5458-008.A00LF 4GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Kingston 99U5458-008.A00LF 4GB vs Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

总分
star star star star star
Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

总分
star star star star star
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB

差异 规格 评论

差异

Kingston 99U5458-008.A00LF 4GB 需要考虑的原因
Kingston 99U5458-008.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 40
    左右 33% 更低的延时
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB 需要考虑的原因
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.4 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 99U5458-008.A00LF 4GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 40
  • 读取速度，GB/s
    13.3 left arrow 13.4
  • 写入速度，GB/s
    9.1 left arrow 11.3
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2324 left arrow 2362

Kingston 99U5458-008.A00LF 4GB RAM的比较

Crucial Technology ST51264BA1339.16FM 4GB
Kingston KHX1600C10D3/4G 4GB

Gold Key Technology Co Ltd GKE800SO51216-2400 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
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Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
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G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
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Essencore Limited IM48GU48A30-GIIHM 8GB
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Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
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Micron Technology 36ASF4G72PZ-2G6H1 32GB
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Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
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Corsair CMK128GX4M8A2400C14 16GB
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Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
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G Skill Intl F4-2400C15-4GNT 4GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
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Crucial Technology CT4G4SFS824A.M8FB 4GB
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Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
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Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
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Corsair CM4X4GF2400Z16K4 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KHX4800C19D4/8GX 8GB
Kingston KHX4800C19D4/8GX 8GB
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AMD R5S38G1601U2S 8GB
Kingston 9905625-062.A00G 8GB
Kingston 9905625-062.A00G 8GB
内存RAM
AMD R5S38G1601U2S 8GB
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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
G Skill Intl F4-3200C16-8GTZRX 8GB
G Skill Intl F4-3200C16-8GTZRX 8GB
内存RAM