Kingston 99U5458-008.A00LF 4GB vs Mushkin 99[2/7/4]202F 4GB

总分

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

总分

Mushkin 99[2/7/4]202F 4GB

Mushkin 99[2/7/4]202F 4GB

差异规格评论

差异

Kingston 99U5458-008.A00LF 4GB

需要考虑的原因
Kingston 99U5458-008.A00LF 4GB

报告一个错误

Mushkin 99[2/7/4]202F 4GB

需要考虑的原因
Mushkin 99[2/7/4]202F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 -8% 更低的延时
更快的读取速度，GB/s

15 13.3

测试中的平均数值
更快的写入速度，GB/s

11.1 9.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5458-008.A00LF 4GB

Mushkin 99[2/7/4]202F 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 25
读取速度，GB/s

13.3 15.0
写入速度，GB/s

9.1 11.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2324 2892

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1G70BH0-YK0 8GB

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Micron Technology 8ATF1G64HZ-2G2G1 8GB

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Samsung M393B1K70CHD-CH9 8GB

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Crucial Technology CT16G4DFD824A.M16FE 16GB

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AMD R538G1601U2S 8GB

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SK Hynix HMA82GS6JJR8N-VK 16GB

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Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Crucial Technology CT8G4DFS8213.M8FB 8GB

Crucial Technology CT8G4DFS8213.M8FB 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Corsair CMG64GX4M2D3600C18 32GB

Corsair CMG64GX4M2D3600C18 32GB