Kingston 99U5458-008.A00LF 4GB vs Patriot Memory (PDP Systems) 2666 C15 Series 4GB

总分

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

总分

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

差异规格评论

差异

Kingston 99U5458-008.A00LF 4GB

需要考虑的原因
Kingston 99U5458-008.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 2666 C15 Series 4GB

报告一个错误

更快的读取速度，GB/s

16.3 13.3

测试中的平均数值
更快的写入速度，GB/s

12.8 9.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5458-008.A00LF 4GB

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

13.3 16.3
写入速度，GB/s

9.1 12.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2324 3084

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Kingston 9965516-112.A00LF 16GB

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Wilk Elektronik S.A. GY2133D464L15/8G 8GB

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Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB

Kingston 9905403-061.A00LF 2GB

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Kingston XCCT36-MIE 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Memphis Electronic D4SO1G724GI-A58SD 8GB

Memphis Electronic D4SO1G724GI-A58SD 8GB

Crucial Technology CT51264BD1339.M16F 4GB

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SK Hynix HMA41GR7AFR8N-UH 8GB