Kingston 99U5469-045.A00LF 4GB vs Samsung M471A2K43DB1-CTD 16GB

总分

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

总分

Samsung M471A2K43DB1-CTD 16GB

Samsung M471A2K43DB1-CTD 16GB

差异规格评论

差异

Kingston 99U5469-045.A00LF 4GB

需要考虑的原因
Kingston 99U5469-045.A00LF 4GB

报告一个错误

Samsung M471A2K43DB1-CTD 16GB

需要考虑的原因
Samsung M471A2K43DB1-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 42

左右 -20% 更低的延时
更快的读取速度，GB/s

15.2 12.8

测试中的平均数值
更快的写入速度，GB/s

10.7 8.3

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston 99U5469-045.A00LF 4GB

Samsung M471A2K43DB1-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 35
读取速度，GB/s

12.8 15.2
写入速度，GB/s

8.3 10.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2095 2773

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Corsair CM2X1024-6400C4 1GB

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Crucial Technology CT16G4DFD8266.C16FE 16GB

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Corsair CML8GX3M2A1600C9 4GB

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SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

Samsung M393A1G43DB0-CPB 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Mushkin MR[A/B]4U320GJJM8G 8GB

Mushkin MR[A/B]4U320GJJM8G 8GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

Micron Technology 16ATF4G64AZ-3G2B1 32GB

Micron Technology 16ATF4G64AZ-3G2B1 32GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

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