Kingston 99U5471-012.A00LF 4GB vs Corsair CMW16GX4M2Z4600C18 8GB

总分

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

总分

Corsair CMW16GX4M2Z4600C18 8GB

Corsair CMW16GX4M2Z4600C18 8GB

差异规格评论

差异

Kingston 99U5471-012.A00LF 4GB

需要考虑的原因
Kingston 99U5471-012.A00LF 4GB

报告一个错误

Corsair CMW16GX4M2Z4600C18 8GB

需要考虑的原因
Corsair CMW16GX4M2Z4600C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 41

左右 -41% 更低的延时
更快的读取速度，GB/s

16.9 12.7

测试中的平均数值
更快的写入速度，GB/s

13.8 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 99U5471-012.A00LF 4GB

Corsair CMW16GX4M2Z4600C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 29
读取速度，GB/s

12.7 16.9
写入速度，GB/s

7.5 13.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2039 3285

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Micron Technology 72ASS8G72LZ-2G6D2 64GB

Kingston 9905403-156.A00LF 2GB

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Samsung M378A1G43EB1-CPB 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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