Kingston 99U5471-012.A00LF 4GB vs Crucial Technology CT16G4DFD8213.M16FA 16GB

总分

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

总分

Crucial Technology CT16G4DFD8213.M16FA 16GB

Crucial Technology CT16G4DFD8213.M16FA 16GB

差异规格评论

差异

Kingston 99U5471-012.A00LF 4GB

需要考虑的原因
Kingston 99U5471-012.A00LF 4GB

报告一个错误

Crucial Technology CT16G4DFD8213.M16FA 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.M16FA 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 41

左右 -64% 更低的延时
更快的读取速度，GB/s

16.2 12.7

测试中的平均数值
更快的写入速度，GB/s

11.3 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5471-012.A00LF 4GB

Crucial Technology CT16G4DFD8213.M16FA 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 25
读取速度，GB/s

12.7 16.2
写入速度，GB/s

7.5 11.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2039 2847

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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最新比较

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InnoDisk Corporation M4C0-AGS1TCIK 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

A-DATA Technology AO1P24HC4R1-BUYS 4GB

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Samsung M393B5270CH0-CH9 4GB

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Panram International Corporation M424016 4GB

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Apacer Technology 78.01G86.9H50C 1GB

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Apacer Technology 78.CAGPP.ARW0B 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Samsung M378B5173BH0-CH9 4GB

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SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMA81GS6CJR8N-VK 8GB

SK Hynix HMA81GS6CJR8N-VK 8GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

A-DATA Technology DDR4 3000 2OZ 8GB

A-DATA Technology DDR4 3000 2OZ 8GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

G Skill Intl F4-3333C16-8GTZKW 8GB

G Skill Intl F4-3333C16-8GTZKW 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Apacer Technology GD2.22428S.001 8GB

Apacer Technology GD2.22428S.001 8GB