Kingston 99U5471-020.A00LF 4GB vs Crucial Technology CT8G4DFS824A.M8FD 8GB

总分

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

总分

Crucial Technology CT8G4DFS824A.M8FD 8GB

Crucial Technology CT8G4DFS824A.M8FD 8GB

差异规格评论

差异

Kingston 99U5471-020.A00LF 4GB

需要考虑的原因
Kingston 99U5471-020.A00LF 4GB

报告一个错误

Crucial Technology CT8G4DFS824A.M8FD 8GB

需要考虑的原因
Crucial Technology CT8G4DFS824A.M8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 42

左右 -31% 更低的延时
更快的读取速度，GB/s

16.1 12.8

测试中的平均数值
更快的写入速度，GB/s

12.1 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 99U5471-020.A00LF 4GB

Crucial Technology CT8G4DFS824A.M8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 32
读取速度，GB/s

12.8 16.1
写入速度，GB/s

8.1 12.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2123 2968

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK16GX4M2K4133C19 8GB

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Crucial Technology CT8G4DFS824A.M8FD 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

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SK Hynix HMA451R7MFR8N-TF 4GB

Corsair VS2GB1333D4 2GB

Corsair VS2GB1333D4 2GB

Crucial Technology BL8G30C15U4W.M8FE1 8GB

Crucial Technology BL8G30C15U4W.M8FE1 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

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Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB